No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF634NPBF | HEXFET Power MOSFET PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRF634NPBF |
Part No | Description ( Function) | Manufacturers | |
IRF634 | N-CHANNEL Power MOSFET IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET General features Type IRF634 IRF634FP VDSS 250V 250V RDS(on) <0.45Ω <0.45Ω ID 8A 8A 33 22 ■ Extremely High dv/dt Capability 11 TO-220 TO-220FP ■ 100% Avalanche Tested t |
STMicroelectronics |
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IRF634 | Power MOSFET(Vdss=250V/ Rds(on)=0.45ohm/ Id=8.1A) |
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IRF634 | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.327Ω (Typ.) 1 2 3 IRF |
Fairchild Semiconductor |
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IRF634 | Trans MOSFET N-CH 250V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
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IRF634 | Power MOSFET ( Transistor ) Power MOSFET IRF634, SiHF634 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 41 6.5 22 Single 0.45 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • |
Vishay |
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