|
|
Datasheet IRF630PBF Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF630PBF | Power MOSFET ( Transistor ) Lead-Free
PD- 95916
IRF630PbF
www.irf.com
1 9/27/04
IRF630PbF
2 www.irf.com
IRF630PbF
www.irf.com
3
IRF630PbF
4 www.irf.com
IRF630PbF
www.irf.com
5
IRF630PbF
6 www.irf.com
IRF630PbF
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations • Low Stray Inductance • Gr |
 International Rectifier |
 |
| 1 | IRF630PBF | N-Channel Type Power MOSFET IRF630PBF
®
IRF630PBF
Pb Free Plating Product
Pb
9A,200V Heatsink N-Channel Type Power MOSFET
Features
̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Charge (Typical 44nC) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested
1.Gate
2.Drain 3.Source
BVDSS = 200V RDS(ON) = 0.4 o |
 Thinki Semiconductor |
|
| Esta página es del resultado de búsqueda del IRF630PBF. Si pulsa el resultado de búsqueda de IRF630PBF se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |