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IRF630 PDF Datasheet

The IRF630 is N-channel MOSFET, 200V/9a Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
41 IRF630
HEXFET Power MOSFET ( Vdss=200V/ Id=9.0A )

International Rectifier
International Rectifier
pdf
40 IRF630
9A, 200V, N-Channel Power MOSFET

Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications

Fairchild Semiconductor
Fairchild Semiconductor
pdf
39 IRF630
200V/9A POWER MOSFET

200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel) General Description • IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. TO-220 • IRF630/IRFS630 a

TAITRON
TAITRON
pdf
38 IRF630
N-channel TrenchMOS transistor

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 9 A g RDS(ON) ≤ 400 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trenc

NXP Semiconductors
NXP Semiconductors
pdf
37 IRF630
N-CHANNEL MOSFET

IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET General features Type IRF630 IRF630FP VDSS 200V 200V RDS(on) <0.40Ω <0.40Ω ■ Extremely high dv/dt capability ■ Very low intrinsic capacitances ■ Gate charge minimized ID 9A 9A Description This power MOSFET is designed using the company’s consolidated strip layout-bas

STMicroelectronics
STMicroelectronics
pdf
36 IRF630
9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

IRF630, RF1S630SM Data Sheet June 1999 File Number 1578.2 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed

Intersil Corporation
Intersil Corporation
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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