No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF614PBF | hexfet power mosfet PD - 94849 IRF614PbF • Lead-Free www.irf.com 1 11/25/06 IRF614PbF 2 www.irf.com IRF614PbF www.irf.com 3 IRF614PbF 4 www.irf.com IRF614PbF www.irf.com 5 IRF614PbF 6 www.irf.com IRF614PbF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRF614PBF |
Part No | Description ( Function) | Manufacturers | |
IRF614 | N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF614 ·DESCRITION ·Designed for high speed applications, such as switching |
Inchange Semiconductor |
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IRF614 | 2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET IRF614 January 1998 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdo |
Intersil Corporation |
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IRF614 | power mosfet |
International Rectifier |
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IRF614 | Power MOSFET ( Transistor ) Power MOSFET IRF614, SiHF614 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 8.2 1.8 4.5 Single 2.0 TO-220AB D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rate |
Vishay |
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IRF614A | Power MOSFET ( Transistor ) )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQW |
Samsung |
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