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Datasheet IRF614 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | IRF614 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements
isc Product Specification
IRF614
·DESCRITION ·Designed for high speed applications,
such as switching power supplies , AC |
 Inchange Semiconductor |
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| 9 | IRF614 | 2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET IRF614
January 1998
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of |
 Intersil Corporation |
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| 8 | IRF614 | power mosfet |
 International Rectifier |
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| 7 | IRF614 | Power MOSFET ( Transistor ) Power MOSFET
IRF614, SiHF614
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
8.2 1.8 4.5 Single
2.0
TO-220AB
D
S D G
G
S N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching |
 Vishay |
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