No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF610B | 200V N-Channel MOSFET IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the av |
Fairchild Semiconductor |
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Recommended search results related to IRF610B |
Part No | Description ( Function) | Manufacturers | |
IRF610 | N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF610 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applic |
Inchange Semiconductor |
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IRF610 | 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET IRF610 Data Sheet June 1999 File Number 1576.3 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the |
Intersil Corporation |
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IRF610 | N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
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IRF610 | Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
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IRF610 | Power MOSFET ( Transistor ) Power MOSFET IRF610, SiHF610 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single 1.5 TO-220AB D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES � |
Vishay |
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ON Semiconductor |
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