No | Part number | Description ( Function ) | Manufacturers | |
6 | IRF540Z | AUTOMOTIVE MOSFET PD - 94758 AUTOMOTIVE MOSFET IRF540Z IRF540ZS IRF540ZL HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 100V RDS(on) = 26.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET util |
International Rectifier |
|
5 | IRF540ZL | AUTOMOTIVE MOSFET PD - 94758 AUTOMOTIVE MOSFET IRF540Z IRF540ZS IRF540ZL HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 100V RDS(on) = 26.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET util |
International Rectifier |
|
4 | IRF540ZLPBF | AUTOMOTIVE MOSFET PD - 95531 AUTOMOTIVE MOSFET IRF540ZPbF IRF540ZSPbF IRF540ZLPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V RDS(on) = 26.5mΩ G S Specifically designed for Automotive applications, this HEXFET® Power MOSFET util |
International Rectifier |
|
3 | IRF540ZPBF | AUTOMOTIVE MOSFET PD - 95531 AUTOMOTIVE MOSFET IRF540ZPbF IRF540ZSPbF IRF540ZLPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V RDS(on) = 26.5mΩ G S Specifically designed for Automotive applications, this HEXFET® Power MOSFET util |
International Rectifier |
|
2 | IRF540ZS | AUTOMOTIVE MOSFET PD - 94758 AUTOMOTIVE MOSFET IRF540Z IRF540ZS IRF540ZL HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G VDSS = 100V RDS(on) = 26.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET util |
International Rectifier |
|
1 | IRF540ZSPBF | AUTOMOTIVE MOSFET PD - 95531 AUTOMOTIVE MOSFET IRF540ZPbF IRF540ZSPbF IRF540ZLPbF HEXFET® Power MOSFET D Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V RDS(on) = 26.5mΩ G S Specifically designed for Automotive applications, this HEXFET® Power MOSFET util |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |