No | Part number | Description ( Function ) | Manufacturers | |
12 | IRF530N | N-channel TrenchMOS transistor Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF530N FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelo |
NXP Semiconductors |
|
11 | IRF530N | 22A/ 100V/ 0.064 Ohm/ N-Channel Power MOSFET IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.intersil.com • Peak Curren |
Intersil Corporation |
|
10 | IRF530N | Power MOSFET(Vdss=100V/ Rds(on)=90mohm/ Id=17A) PD - 91351 IRF530N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 90mΩ G S ID = 17A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low |
International Rectifier |
|
9 | IRF530N | Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
|
8 | IRF530N | Power MOSFET ( Transistor ) Data Sheet January 2002 IRF530N 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE) IRF530N D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairch |
Fairchild Semiconductor |
|
7 | IRF530NL | HEXFET Power MOSFET PD - 91352B HEXFET Power MOSFET l l l l l l IRF530NS IRF530NL ® VDSS = 100V RDS(on) = 90mΩ Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S ID = 17A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |