No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF530L | Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) PD - 91352A IRF530NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V G S RDS(on) = 0.11Ω ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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