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IRF530L PDF Datasheet

The IRF530L is Power MOSFET(vdss=100V/ Rds(on)=0.11ohm/ Id=17a). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRF530L
Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)

PD - 91352A IRF530NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V G S RDS(on) = 0.11Ω ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRF530L

Part No Description ( Function) Manufacturers PDF
IRF530   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF530 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for high voltage,high speed applic

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IRF530   N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICAL RDS(on) = 0.115Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s LOW GATE CHARGE s HIGH CURRENT CAPABILITY 3

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IRF530   N-CHANNEL ENHANCEMENT-MODE SILICON GATE

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[1]    

List of most widely used semiconductors

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