| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | IRF5210SPBF | HEXFET Power MOSFET PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D VDSS = -100V RDS(on) = 60mΩ G S ID = -38A D Description Features of this design are a 150°C |
 International Rectifier |
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Recommended search results related to IRF5210SPBF |
| Part No | Description ( Function) | Manufacturers | |
| AUIRF5210S | Power MOSFET ( Transistor ) AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology P-Channel MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automot |
 Infineon |
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| AUIRF5210S | Power MOSFET ( Transistor ) AUTOMOTIVE GRADE AUIRF5210S HEXFET® Power MOSFET -100V 60m -38A Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating D V(BR)DSS RDS(on) max. ID 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S |
International Rectifier |
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| IRF5210 | Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A) PD - 91434A IRF5210 HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.06Ω G ID = -40A S Description Fifth Gen |
International Rectifier |
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| IRF5210L | Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A) PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -100V RDS(on) = 0.06Ω G ID = |
International Rectifier |
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| IRF5210LPBF | HEXFET Power MOSFET PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free |
International Rectifier |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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