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IRF5210S PDF Datasheet

The IRF5210S is Trans MOSFET P-ch 100V 40A 3-pin(2+tab) D2pak, Power MOSFET(vdss=-100V/ Rds(on)=0.06ohm/. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
3 IRF5210S
Power MOSFET(Vdss=-100V/ Rds(on)=0.06ohm/ Id=-40A)

PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -100V RDS(on) = 0.06Ω G ID = -40A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

International Rectifier
International Rectifier
pdf
2 IRF5210S
Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK

New Jersey Semiconductor
New Jersey Semiconductor
pdf
1 IRF5210SPBF
HEXFET Power MOSFET

PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L P-Channel Lead-Free D VDSS = -100V RDS(on) = 60mΩ G S ID = -38A D Description Features of this design are a 150°C

International Rectifier
International Rectifier
pdf

[1]    

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Vishay
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This is a popular adjustable voltage regulator.
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On Semiconductor
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