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Datasheet IRF520V Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRF520V | Power MOSFET(Vdss=100V/ Rds(on)=0.165ohm/ Id=9.6A) PD - 94092
IRF520V
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description
l l
D
VDSS = 100V RDS(on) = 0.165Ω
G S
ID = 9.6A
Advanced |
 International Rectifier |
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| 4 | IRF520V | Trans MOSFET N-CH 100V 9.6A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
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| 3 | IRF520VL | Power MOSFET(Vdss=100V/ Rds(on)=0.165ohm/ Id=9.6A) PD - 94306
HEXFET® Power MOSFET
l l l l l l l
IRF520VS IRF520VL
VDSS = 100V
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications
D
RDS(on) = 0.165Ω
G S
ID = 9.6A
Advanced H |
International Rectifier |
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| 2 | IRF520VPBF | Power MOSFET ( Transistor )
PD - 94819
IRF520VPbF
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanc |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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