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Datasheet IRF520FI Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRF520FI | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES ·Typical RDS(on) =0.23Ω ·Avalanche Rugged Technology ·High Current Capability ·Low Gate Charge ·175℃ Operating Temperature
isc Product Specification
IRF520FI
·DESCRITION ·High Current ,High Speed Switching ·DC-DC&DC-AC Co |
 Inchange Semiconductor |
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| 1 | IRF520FI | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRF520 IRF520FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF520 IRF520FI
s s s s s s s
V DSS 100 V 100 V
R DS( on) < 0.27 Ω < 0.27 Ω
ID 10 A 7A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH |
 STMicroelectronics |
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