No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF520A | Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ.) Ο IRF520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute |
Fairchild Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRF520A |
Part No | Description ( Function) | Manufacturers | |
IRF520 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI s s s s s s s V DSS 100 V 100 V R DS( on) < 0.27 Ω < 0.27 Ω ID 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC L |
STMicroelectronics |
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IRF520 | N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
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IRF520 | 9.2A/ 100V/ 0.270 Ohm/ N-Channel Power MOSFET IRF520 Data Sheet November 1999 File Number 1574.4 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in |
Intersil Corporation |
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IRF520 | N-Channel Power MOSFETs/ 11 A/ 60-100 V Data Sheet January 2002 IRF520 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval |
Fairchild Semiconductor |
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IRF520 | Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
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