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IRF450 PDF Datasheet

The IRF450 is N-channel Power MOSFET, N-channel Power MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
8 IRF450
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF450 DESCRIPTION ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipation Limited ·Linear Transfer Characteristics ·Related Literature APPLICATIONS ·Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar swi

Inchange Semiconductor
Inchange Semiconductor
pdf
7 IRF450
N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor
pdf
6 IRF450
N-CHANNEL POWER MOSFET

IRF450 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 VDSS ID(cont) RDS(on) FEATURES 500V 13A 0.4W 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 7.87 (0.310) 6.99 (0.275)

Seme LAB
Seme LAB
pdf
5 IRF450
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET

IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

Fairchild Semiconductor
Fairchild Semiconductor
pdf
4 IRF450
13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET

IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such

Intersil Corporation
Intersil Corporation
pdf
3 IRF450
TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=0.400ohm/ Id=12A)

PD - 90330F REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A  IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of th

International Rectifier
International Rectifier
pdf

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Vishay Semiconductor
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On Semiconductor
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