No | Part number | Description ( Function ) | Manufacturers | |
8 | IRF450 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF450 DESCRIPTION ·13A,500V ·RDS(on)=0.4Ω ·SOA is Power Dissipation Limited ·Linear Transfer Characteristics ·Related Literature APPLICATIONS ·Designed for applications such as switching regulators, switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar swi |
Inchange Semiconductor |
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7 | IRF450 | N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
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6 | IRF450 | N-CHANNEL POWER MOSFET IRF450 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 VDSS ID(cont) RDS(on) FEATURES 500V 13A 0.4W 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 7.87 (0.310) 6.99 (0.275) |
Seme LAB |
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5 | IRF450 | 13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such |
Fairchild Semiconductor |
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4 | IRF450 | 13A/ 500V/ 0.400 Ohm/ N-Channel Power MOSFET IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such |
Intersil Corporation |
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3 | IRF450 | TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=0.400ohm/ Id=12A) PD - 90330F REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of th |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |