No | Part number | Description ( Function ) | Manufacturers | |
1 | IRF430R | Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IRF430R |
Part No | Description ( Function) | Manufacturers | |
IRF430 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF430 DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC a |
Inchange Semiconductor |
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IRF430 | N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
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IRF430 | N-CHANNEL POWER MOSFET IRF430 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. N–CHANNEL POWER MOSFET 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) 1.63 (0. |
Seme LAB |
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IRF430 | 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET IRF430 Data Sheet March 1999 File Number 1572.4 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the |
Intersil Corporation |
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IRF430 | TRANSISTORS N-CHANNEL(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A) PD - 90336F IRF430 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to |
International Rectifier |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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