No | Part number | Description ( Function ) | Manufacturers | |
2 | IRF3710S | Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) PD -91310C IRF3710S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF3710S) Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.025Ω G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo |
International Rectifier |
|
1 | IRF3710SPBF | Power MOSFET ( Transistor ) IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e |
International Rectifier |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |