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Datasheet IRF3710 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IRF3710 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
IRF3710 Series RRooHHSS
DESCRIPTION
Nell High Power Products
N-Channel Power MOSFET (57A, 100Volts)
The Nell IRF3710 are N-channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand level of energy in breakdown avalan |  nELL | mosfet |
| 2 | IRF3710 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF3710
·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 25mΩ(Max)
·DESCRITION ·Designed for high effciency switch mode power |  Inchange Semiconductor | mosfet |
| 3 | IRF3710 | N-CHANNEL MOSFET IRF3710
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
阻抗低，开关速度快。 Low On-Resistance, fast switching.
用途 / Applications
用于高效 DC/DC 转换和功率开 |  BLUE ROCKET ELECTRONICS | mosfet |
| 4 | IRF3710 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
TECHNICAL DATA
N-Channel Power MOSFET (100V/59A) Purpose
Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products
Feature
Low RDS(on),low gate charge,low Crss,fast switching.
|  First Silicon | mosfet |
| 5 | IRF3710 | Power MOSFET, Transistor PD - 91309C
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
IRF3710
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 23mΩ
G
ID = 57A
S
Description
Advanced HEXFET® Power MOSFETs from Internation |  International Rectifier | mosfet |
IRF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IRF-182xx | Inductors w w ELECTRICAL SPECIFICATIONS
MATERIAL SPECIFICATIONS
Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite.
a D . w
ta
Sh
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4U
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Inductors
Epoxy Conformal Coated Uniform Roll Coated
FEATURES
IRF
Vishay Dale
• Flame-retardant coating and color band identification.  Vishay Intertechnology inductor | | |
| 2 | IRF-46 | Inductors Epoxy Conformal Coated
IRF-46
Vishay Dale
Inductors
Epoxy Conformal Coated, Axial Leaded
FEATURES
• Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi  Vishay Siliconix inductor | | |
| 3 | IRF034 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF034
DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power supp Inchange Semiconductor mosfet | | |
| 4 | IRF034 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90585
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF034
IRF034 60V, N-CHANNEL
BVDSS RDS(on) 60V 0.050Ω
ID 25Α
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi International Rectifier transistor | | |
| 5 | IRF044 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF044
DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power sup Inchange Semiconductor mosfet | | |
| 6 | IRF044 | N-CHANNEL POWER MOSFET IRF044
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07  Seme LAB mosfet | | |
| 7 | IRF044 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
PD - 90584
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α
IRF044 60V, N-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of International Rectifier transistor | |
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