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Datasheet IRF350 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRF350 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF350
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated
temperature ·Rugged
APPLICATIONS ·Designed especially for high voltage,high spee |
 Inchange Semiconductor |
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| 6 | IRF350 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 5 | IRF350 | 15A/ 400V/ 0.300 Ohm/ N-Channel Power MOSFET IRF350
Data Sheet March 1999 File Number 1826.3
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for |
 Intersil Corporation |
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| 4 | IRF350 | TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.300ohm/ Id=14A) PD - 90339F
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF350 BVDSS 400V RDS(on) 0.300Ω ID 14A
IRF350 JANTX2N6768 JANTXV2N6768 [REF:MIL-PRF-19500/543] 400V, N-CHANNEL
The HEXFETtechnology is the key to International Rec |
 International Rectifier |
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