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Datasheet IRF323 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRF323 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF323
DESCRIPTION ·Drain Current ID=2.8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 350V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =2.5Ω(Max)
APPLICATIONS ·Switching power supplies ·Switching converters, |
 Inchange Semiconductor |
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| 5 | IRF323 | N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
 Fairchild Semiconductor |
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| 4 | IRF323 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 3 | IRF323 | 2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs Semiconductor
IRF320, IRF321, IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speci� |
 Intersil Corporation |
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