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Datasheet IRF3205 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 21 | IRF3205 | N-Channel Trench Process Power MOSFET Transistor IRF3205
®
Pb Free Plating Product
IRF3205
Pb
N-Channel Trench Process Power MOSFET Transistor
General Description
The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switch |
 Thinki Semiconductor |
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| 20 | IRF3205 | 110A, 55V, N-Channel MOSFET ( Transistor ) INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF3205
FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.008Ω(Max)
Description Advanced HEXFET ® Power MOSFETs from Internati |
 Inchange Semiconductor |
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| 19 | IRF3205 | N-CHANNEL MOSFET IRF3205
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions TO-220 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220 Plastic Package.
特征 / Features
阻抗低，开关速度快。 Low On-Resistance, fast switching.
用途 / Applications
用于高效 DC/DC 转换和功率开 |
 BLUE ROCKET ELECTRONICS |
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| 18 | IRF3205 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR
TECHNICAL DATA
N-Channel Power MOSFET (55V/120A) Purpose
Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products
Feature
Low RDS(on),low gate charge,low Crss,fast switching.
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 First Silicon |
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