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IRF2907ZSPBF PDF Datasheet

The IRF2907ZSPBF is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 IRF2907ZSPBF
Power MOSFET ( Transistor )

PD - 95489D Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(on) = 4.5mΩ G S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extrem

International Rectifier
International Rectifier
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Recommended search results related to IRF2907ZSPBF

Part No Description ( Function) Manufacturers PDF
AUIRF2907Z   HEXFET Power MOSFET

PD - 97545 AUTOMOTIVE GRADE Features ● ● ● ● ● HEXFET® Power MOSFET D AUIRF2907Z 75V 4.5mΩ 170A 75A ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tj

International Rectifier
International Rectifier
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AUIRF2907ZS-7P   HEXFET Power MOSFET

PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET® Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Autom

International Rectifier
International Rectifier
datasheet pdf
IRF2907LPbF   (IRF2907ZxPbF) HEXFET Power MOSFET

PD - 95489A AUTOMOTIVE MOSFET Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(

International Rectifier
International Rectifier
datasheet pdf
IRF2907SLPbF   (IRF2907ZxPbF) HEXFET Power MOSFET

PD - 95489A AUTOMOTIVE MOSFET Features l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 75V RDS(

International Rectifier
International Rectifier
datasheet pdf
IRF2907Z   AUTOMOTIVE MOSFET

PD - 95872 AUTOMOTIVE MOSFET IRF2907Z IRF2907ZS IRF2907ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 75V RDS(on) = 4.5mΩ‰ G S

International Rectifier
International Rectifier
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[1]    

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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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