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Datasheet IRF2907Z Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | IRF2907Z | AUTOMOTIVE MOSFET PD - 95872
AUTOMOTIVE MOSFET
IRF2907Z IRF2907ZS IRF2907ZL
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 75V RDS(on) = 4.5mΩ
G S
Description
Specific |
International Rectifier |
|
7 | IRF2907ZL | AUTOMOTIVE MOSFET PD - 95872
AUTOMOTIVE MOSFET
IRF2907Z IRF2907ZS IRF2907ZL
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 75V RDS(on) = 4.5mΩ
G S
Description
Specific |
International Rectifier |
|
6 | IRF2907ZLPbF | (IRF2907ZxPbF) HEXFET Power MOSFET PD - 95489A
AUTOMOTIVE MOSFET
Features
l l l l l l
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 75V RDS(on) = 4.5mΩ
G S |
International Rectifier |
|
5 | IRF2907ZLPbF | Power MOSFET ( Transistor ) PD - 95489D
Features
l l l l l l
IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 75V RDS(on) = 4.5mΩ
G S
Description
This H |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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