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Datasheet IRF2903Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRF2903Z | HEXFET Power MOSFET PD - 96988A
AUTOMOTIVE MOSFET
IRF2903Z IRF2903ZS IRF2903ZL
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
D
VDSS = 30V RDS(on) = 2.4mΩ
G S
Description
Specifi |
 International Rectifier |
 |
| 5 | IRF2903ZL | HEXFET Power MOSFET PD - 96988A
AUTOMOTIVE MOSFET
IRF2903Z IRF2903ZS IRF2903ZL
HEXFET® Power MOSFET
D
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
D
VDSS = 30V RDS(on) = 2.4mΩ
G S
Description
Specifi |
International Rectifier |
|
| 4 | IRF2903ZLPBF | AUTOMOTIVE MOSFET PD - 96098
AUTOMOTIVE MOSFET
Features
l l l l l l
IRF2903ZSPbF IRF2903ZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 30V RDS(on) = 2.4mΩ
G S
ID = 75A
D
De |
International Rectifier |
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| 3 | IRF2903ZPBF | AUTOMOTIVE MOSFET PD -96097
AUTOMOTIVE MOSFET
Features
l l l l l l
IRF2903ZPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 30V RDS(on) = 2.4mΩ
G S
ID = 75A
Description
Specifi |
International Rectifier |
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