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IRF2807PBF PDF Datasheet

The IRF2807PBF is Hexfet Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IRF2807PBF
HEXFET Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi

International Rectifier
International Rectifier
pdf

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Recommended search results related to IRF2807PBF

Part No Description ( Function) Manufacturers PDF
AUIRF2807   Power MOSFET ( Transistor )

PD - 96384A AUTOMOTIVE GRADE AUIRF2807 HEXFET® Power MOSFET D Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, Ro

International Rectifier
International Rectifier
datasheet pdf
IRF2807   Power MOSFET ( Transistor )

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico

International Rectifier
International Rectifier
datasheet pdf
IRF2807L   HEXFET Power MOSFET

PD - 94170 Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D IRF2807S IRF2807L VDSS = 75V RDS(on) = 13mΩ G S ID = 82A‡ Advanced HEXFET

International Rectifier
International Rectifier
datasheet pdf
IRF2807LPbF   HEXFET Power MOSFET

Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRF2807SPbF IRF2807LPbF D PD - 95945 HEXFET® Power MOSFET VDSS = 75V RDS(on) = 13mΩ S G www.DataS

International Rectifier
International Rectifier
datasheet pdf
IRF2807S   HEXFET Power MOSFET

PD - 94170 Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D IRF2807S IRF2807L VDSS = 75V RDS(on) = 13mΩ G S ID = 82A‡ Advanced HEXFET

International Rectifier
International Rectifier
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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