Datasheet IRF2804PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRF2804PBF	HEXFET Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon	International Rectifier

IRF2804 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRF2804	HEXFET Power MOSFET PD - 94436C AUTOMOTIVE MOSFET IRF2804 IRF2804S IRF2804L HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0mΩ G S De	International Rectifier
IRF2804	HEXFET Power MOSFET IRF2804 IRF2804S/L Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0mΩ G S Description Specifically designed for Au	FreesCale Electronics
IRF2804PbF	HEXFET Power MOSFET Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-res	International Rectifier

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