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Datasheet IRF250 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | IRF250 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF250
DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.085Ω(Max) ·Nanosecond Switching Speed
APPLICATIONS ·Switching power |
 Inchange Semiconductor |
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| 10 | IRF250 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 9 | IRF250 | N-CHANNEL POWER MOSFET IRF250
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07 |
 Seme LAB |
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| 8 | IRF250 | 30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET IRF250
Data Sheet March 1999 File Number
1825.3
30A, 200V, 0.085 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These M |
 Intersil Corporation |
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