No | Part number | Description ( Function ) | Manufacturers | |
17 | IRF150 | N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
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16 | IRF150 | N-CHANNEL POWER MOSFET IRF150 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3 |
Seme LAB |
|
15 | IRF150 | 40A/ 100V/ 0.055 Ohm/ N-Channel Power MOSFET IRF150 Data Sheet March 1999 File Number 1824.3 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such |
Intersil Corporation |
|
14 | IRF150 | TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A) PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and u |
International Rectifier |
|
13 | IRF150 | N-Channel Power MOSFETs/ 40 A/ 60 V/100 V |
Fairchild Semiconductor |
|
12 | IRF150 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR IRF150 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as swi |
nELL |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |