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Datasheet IRF1404Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRF1404Z | Power MOSFET ( Transistor ) PD - 94634B
IRF1404Z IRF1404ZS IRF1404ZL
Features
l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
VDSS = 40V RDS(on) = 3.7mΩ
This HEXFET® Power MOSFET utilizes the late |
 International Rectifier |
 |
| 6 | IRF1404ZGPBF | Power MOSFET ( Transistor ) PD - 96236A
IRF1404ZGPbF
Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free
HEXFET® Power MOSFET
D
VDSS = 40V RDS(on) = 3.7mΩ
G S
Description
This HEXFET® Po |
International Rectifier |
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| 5 | IRF1404ZL | Power MOSFET ( Transistor ) PD - 94634B
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silico |
International Rectifier |
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| 4 | IRF1404ZLPBF | AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET
PD - 96040
Features
l l l l l l
IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
G
VDSS = 40V RD |
International Rectifier |
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