|
|
Datasheet IRF140 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 47 | IRF140 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF140
DESCRIPTION ·Drain Current ID=27A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.085Ω(Max) ·High Power,High Speed Applications
APPLICATIONS ·Switching p |
 Inchange Semiconductor |
 |
| 46 | IRF140 | N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
|
| 45 | IRF140 | N-CHANNEL POWER MOSFET IRF140
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
1
20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.07 |
 Seme LAB |
|
| 44 | IRF140 | 28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET IRF140
Data Sheet March 1999 File Number
2306.3
28A, 100V, 0.077 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
|
| Esta página es del resultado de búsqueda del IRF140. Si pulsa el resultado de búsqueda de IRF140 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |