No | Part number | Description ( Function ) | Manufacturers | |
5 | IRF122 | N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
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4 | IRF122 | N-CHANNEL POWER MOSFETS |
Samsung semiconductor |
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3 | IRF122 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these |
Intersil Corporation |
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2 | IRF122 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF122 DESCRIPTION ·Drain Current ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) ·Nanosecond Switching Speeds APPLICATIONS ·Switching power supplies ·Motor controls,Inverters and Choppers ·Audio amplifiers and high energy |
Inchange Semiconductor |
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1 | IRF122 | Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |