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IRF101 PDF Datasheet

The IRF101 is N-channel Power MOSFETs/ 27 A/ 60-100V. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
29 IRF101
N-Channel Power MOSFETs/ 27 A/ 60-100V

Fairchild Semiconductor
Fairchild Semiconductor
pdf
28 IRF1010
N-Channel Power MOSFET / Transistor

SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient

nELL
nELL
pdf
27 IRF1010E
Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A

PD - 91670 IRF1010E HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 12mΩ G S ID = 84A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

International Rectifier
International Rectifier
pdf
26 IRF1010EL
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)

PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achiev

International Rectifier
International Rectifier
pdf
25 IRF1010ELPbF
HEXFET Power MOSFET

PD - 95444 Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing

International Rectifier
International Rectifier
pdf
24 IRF1010EPBF
Power MOSFET ( Transistor )

PD - 94965A IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S ID = 84A‡ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing technique

International Rectifier
International Rectifier
pdf

[1]    [2]    [3]    [4]    [5]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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