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Datasheet IR51H737 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IR51H737 | SELF-OSCILLATING HALF-BRIDGE Previous Datasheet
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Data Sheet No. PD-6.057D
IR51H737
SELF-OSCILLATING HALF-BRIDGE
Features
n n n n n n
Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 300V 50% 1.2µs 0.75Ω 2.0W
Output Power MOSFETs in half-bridge configuration 300V Rated Breakdow | International Rectifier | data |
IR5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IR5001 | UNIVERSAL ACTIVE ORING CONTROLLER Data Sheet No.PD60229
IR5001
UNIVERSAL ACTIVE ORING CONTROLLER
DESCRIPTION
The IR5001 is a universal high-speed controller and N-channel power MOSFET driver for Active ORing and reverse polarity protection applications. The output voltage of the IR5001 is determined based on the polarity of the vol International Rectifier controller | | |
2 | IR5040 | Infrared Emitting Diode RoH S Con fo rm ity
INFRARED PRODUCTS
( Infrared Emitting Diode )
REV:C DATE:2009/9/21
2DEVICE NO:IR5040 2LENS COLOR:
colored transparent Ö water clear
2PACKAGE DIMENSIONS:
30.6 16.1 14.6 12.5 4.0
2ABSOLUTE MAXIMUM RATINGS:
PARAMETER Supply Voltage Operating Temperature Storage Temperature SYMB HUEY JANN ELECTRONICS diode | | |
3 | IR51H214 | SELF-OSCILLATING HALF-BRIDGE Previous Datasheet
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Data Sheet No. PD-6.058D
IR51H214
SELF-OSCILLATING HALF-BRIDGE
Features
n n n n n n
Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 2.0Ω 2.0W
Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown International Rectifier data | | |
4 | IR51H224 | SELF-OSCILLATING HALF-BRIDGE Previous Datasheet
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Data Sheet No. PD-6.059D
IR51H224
SELF-OSCILLATING HALF-BRIDGE
Features
n n n n n n
Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 250V 50% 1.2µs 1.1Ω 2.0W
Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown International Rectifier data | | |
5 | IR51H310 | SELF-OSCILLATING HALF-BRIDGE Previous Datasheet
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Data Sheet No. PD-6.060D
IR51H310
SELF-OSCILLATING HALF-BRIDGE
Features
n n n n n n
Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 400V 50% 1.2µs 3.6Ω 2.0W
Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown International Rectifier data | | |
6 | IR51H320 | SELF-OSCILLATING HALF-BRIDGE Previous Datasheet
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Data Sheet No. PD-6.067B
IR51H320
SELF-OSCILLATING HALF-BRIDGE
Features
n n n n n n
Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 400V 50% 1.2µs 1.8Ω 2.0W
Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown International Rectifier data | | |
7 | IR51H420 | SELF-OSCILLATING HALF-BRIDGE Previous Datasheet
Index
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Data Sheet No. PD-6.057D
IR51H420
SELF-OSCILLATING HALF-BRIDGE
Features
n n n n n n
Product Summary
VIN (max) Duty Cycle Deadtime RDS(on) PD (TA = 25 ºC) 500V 50% 1.2µs 3.0Ω 2.0W
Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown International Rectifier data | |
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