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Datasheet IPP35CN10N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IPP35CN10N | Power-Transistor IPB35CN10N G IPI35CN10N G IPP35CN10N G
IPD33CN10N G IPU33CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qu |
 Infineon |
 |
| 1 | IPP35CN10NG | Power-Transistor IPB35CN10N G IPI35CN10N G IPP35CN10N G
IPD33CN10N G IPU33CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qu |
Infineon |
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