Datasheet IPP200N15N3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPP200N15N3G	Power-Transistor IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified a	Infineon Technologies

IPP200N15 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPP200N15N3G	Power-Transistor IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compl	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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