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Datasheet IPP086N10N3G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IPP086N10N3G | Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO 252) ID
100 V 8.2 mW 80 A
• 175 °C operating tem |
Infineon |
IPP086N10 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IPP086N10N3G | Power-Transistor |
Infineon |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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