No | Part number | Description ( Function ) | Manufacturers | |
1 | IPP06CN10NG | Power-Transistor IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),ma |
Infineon Technologies |
0  1  2  3  4  5  6  7  8 9 |
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2518061017Y6 | Chip Beads High Current Part Number 9 9 9 9 9 9 9 9 Pkg. Size 0805 (2012) 0805 (2012) 1206 (3216) 1206 (3216) 1806 (4516) 1806 (4516) 1812 (4532) 50 MHz 47 94 39 96 36 75 92 Impedance (Ω) 100 500 MHz+ MHz 60 ±25% 120 ±25% 50 ±25% 120 ±25% 50 ±25% 100 ±25% 120 ±25% 88 158 68 137 |
ETC |
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5082-0610 | Diode ( Rectifier ) |
American Microsemiconductor |
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