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Datasheet IPD50R950CE Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IPD50R950CEMOSFET, Transistor

IPD50R950CE,IPU50R950CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenabling
Infineon
Infineon		mosfet


IPD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IPD025N06NMOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPD025N06N DataSheet Rev.2.5 Final PowerManagement&Multimarket 1Description Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance �
Infineon
Infineon		mosfet
2IPD031N03LGPower-Transistor

Kf^S "%&$!"#b % (>.;?6?@<> 7NJ\]ZN[ R!3 DEDH;E5: ;@ 9 ( * . ! / 8AC. ( + . R* BE;? ;K76 E75: @ A>A9J 8AC    5A@ G7CE7CD R, F3 >;8;76 3 55AC6;@ 9 EA %   *# 8ACE3 C97E3 BB>;53 E;A@ D R) 5: 3 @ @ 7> >A9;5 >7G7> R I57>>7@ E93 E7 5: 3 C97 I( ;J"]\# BCA6F5E!* (  R0 7CJ >AH A@ C7D;D
Infineon
Infineon		transistor
3IPD031N06L3GPower-Transistor

Jf]R %   #  !   $()'#$%!&#" % (>.;?6?@<> 7NJ\]ZN[ R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R) AE:> :K65 E649? @=@8J 7@C    4@? G6CE6CD R I46==6? E82 E6 492 C86 I' 9I"\[# AC@5F4E ) '  R/ 6CJ =@H @? C6D:DE2 ? 46 , 9I"\[# R( 492 ? ? 6= =@8:4 =6G6= R 
Infineon
Infineon		transistor
4IPD038N06N3GPower-Transistor

Id\Q "%&$!"#a # : A 0<& <,9=4=>: < 6LHZ[XLY P G3 5<<5>C71C5 3 81A75 G( 9H"[Z# @A? 4D3 C ( &  P. 5AH A5B9BC1>3 5 ( 9H"[Z# P' 3 81>>5< >? A=1<<5E5< P6? ABH>3 A53 C9693 1C9? > 4A9E5B1>4 43 43 ,& ) , P E1<1>3 85 A1C54 P. 5AH A5B9BC1>3 5 ( 9H"[Z# P* D1<96954 13 3 ? A49>7 C?
Infineon Technologies
Infineon Technologies		transistor
5IPD03N03LAIdeal for high-frequency dc/dc converters Qualified according to JEDEC for target applications

IPD03N03LA G IPS03N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operatin
Infineon Technologies
Infineon Technologies		converter
6IPD03N03LBOptiMOS 2 Power-Transistor

IPD03N03LB G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature �
Infineon Technologies
Infineon Technologies		transistor
7IPD040N03LGPower-Transistor

Je]R "%&$!"#b $ ;B 1='=-: >5>?;= 6MI[\YMZ Q 2 CDCG:D49:? 8 ' ) -  . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B    4@? F6BD6BC Q+ E2 =:7:65 2 44@B5:? 8 D@ $     )# 7@BD2 B86D2 AA=:42 D:@? C Q( 492 ? ? 6= =@8:4 =6F6= Q H46==6? D82 D6 492 B86 H' 9I"\[# AB@5E4D ) '  Q/ 6BI =@G @? B6C:CD2 ?
Infineon
Infineon		transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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