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Datasheet IPC100N04S5-1R9 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IPC100N04S5-1R9Power-Transistor

IPC100N04S5-1R9 OptiMOS™-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.9 mW 100 A PG-TDSON-8-34 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175
Infineon
Infineon
transistor


IPC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IPC-CC-830BQualification and Performance of Electrical Insulating Compound

IPC-CC-830B Amendment 1 Qualification and Performance of Electrical Insulating Compound for Printed Wiring Assemblies September 2008 A standard developed by IPC Association Connecting Electronics Industries ® The Principles of Standardization In May 1995 the IPC’s Technical Activities Executive
IPC
IPC
data
2IPC014N03L3MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC014N03L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC014N03L3 1Description •N-channelenhancementmode •Fordynamiccharacterizatio
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Infineon
mosfet
3IPC020N10L3MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC020N10L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC020N10L3 1Description •N-channelenhancementmode •Fordynamiccharacterizatio
Infineon
Infineon
mosfet
4IPC022N03L3MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC022N03L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC022N03L3 1Description •N-channelenhancementmode •Fordynamiccharacterizatio
Infineon
Infineon
mosfet
5IPC028N03L3MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC028N03L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC028N03L3 1Description •N-channelenhancementmode •Fordynamiccharacterizatio
Infineon
Infineon
mosfet
6IPC042N03L3MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC042N03L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC042N03L3 1Description •N-channelenhancementmode •Fordynamiccharacterizatio
Infineon
Infineon
mosfet
7IPC045N10L3MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC045N10L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC045N10L3 1Description •N-channelenhancementmode •Fordynamiccharacterizatio
Infineon
Infineon
mosfet



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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