No | Part number | Description ( Function ) | Manufacturers | |
1 | IPB60R125CP | Power Transistor IPB60R125CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.125 Ω 53 nC PG-TO263 CoolMOS CP is specially des |
Infineon Technologies |
0  1  2  3  4  5  6  7  8 9 |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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