No | Part number | Description ( Function ) | Manufacturers | |
1 | IPB34CN10NG | Power-Transistor IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) |
Infineon |
0  1  2  3  4  5  6  7  8 9 |
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