No | Part number | Description ( Function ) | Manufacturers | |
1 | IPB180N10S4-03 | Power-Transistor OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB180N10S4-03 Product Summary VDS RDS(on) ID 100 V 3.3 mW 180 A PG-TO263-7-3 Type IPB180N10S4-03 Package PG-TO263-7-3 Marking 4N1003 Maxim |
Infineon |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to IPB180N10S4-03 |
Part No | Description ( Function) | Manufacturers | |
IPB180N10S4-02 | Power-Transistor OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB180N10S4-02 Product Summary VDS RDS(on) ID 100 V 2.5 mΩ |
Infineon |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |