Datasheet IPB123N10N3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPB123N10N3G	Power-Transistor IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A �	Infineon Technologies

IPB123N10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPB123N10N3G	Power-Transistor IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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