No | Part number | Description ( Function ) | Manufacturers | |
1 | IPB08CN10NG | Power-Transistor IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max |
Infineon Technologies |
0  1  2  3  4  5  6  7  8 9 |
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