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Datasheet IPB042N10N3G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IPB042N10N3G | Power-Transistor IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO 263) ID
100 V 4.2 mW 100 A
• 175 °C operating temperature
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Infineon Technologies |
IPB042N10 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IPB042N10N3G | Power-Transistor |
Infineon Technologies |
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Número de pieza | Descripción | Fabricantes | |
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