Datasheet IPB025N10N3G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IPB025N10N3G	MOSFET ( Transistor ) OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for	Infineon

IPB025N10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IPB025N10N3G	MOSFET ( Transistor ) OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified accor	Infineon

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