No | Part number | Description ( Function ) | Manufacturers | |
1 | IN5832 | Schottky Diodes Naina Semiconductor emiconductor Ltd. Schottky Barrier Rectifier Diode Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss 1N5832 Electrical Ratings (TC = 250C, unless otherwise noted) Parameter Repetitive peak reverse voltage DC blocking voltage Non-repetitive |
Naina Semiconductor |
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Recommended search results related to IN5832 |
Part No | Description ( Function) | Manufacturers | |
1N5832 | 40 Amp Schottky Rectifier |
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1N5832 | (1N5832 - 1N5834R) Schottky Power Diode Naina Semiconductor Ltd. Schottky Power Diode, 40A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5832 thru 1N5834R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless othe |
Naina Semiconductor |
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1N5832 | (1N5832 - 1N5834R) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ |
America Semiconductor |
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1N5832 | Diode Schottky 20V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
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1N5832 | Silicon Power Schottky Diode Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5832 thru 1N5834R VRRM = 20 V - 40 V IF(AV) = 40 A DO-5 P |
GeneSiC |
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