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IGU04N60T PDF Datasheet

The IGU04N60T is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 IGU04N60T
IGBT ( Insulated Gate Bipolar Transistor )

IGU04N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ technology C  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - frequency inverters - drives  TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature

Infineon
Infineon
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