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Datasheet IDT74FCT257DTD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IDT74FCT257DTD | FAST CMOS QUAD 2-INPUT MULTIPLEXER FAST CMOS QUAD 2-INPUT MULTIPLEXER
Integrated Device Technology, Inc.
IDT54/74FCT157T/AT/CT/DT IDT54/74FCT257T/AT/CT/DT IDT54/74FCT2257T/AT/CT
FEATURES:
• Common features: – Low input and output leakage ≤1µA (max.) – CMOS power levels – True TTL input and output compatibility – VOH = |  Integrated Device Tech | cmos |
| 2 | IDT74FCT257DTDB | FAST CMOS QUAD 2-INPUT MULTIPLEXER FAST CMOS QUAD 2-INPUT MULTIPLEXER
Integrated Device Technology, Inc.
IDT54/74FCT157T/AT/CT/DT IDT54/74FCT257T/AT/CT/DT IDT54/74FCT2257T/AT/CT
FEATURES:
• Common features: – Low input and output leakage ≤1µA (max.) – CMOS power levels – True TTL input and output compatibility – VOH = | Integrated Device Tech | cmos |
| 3 | IDT74FCT257DTDQ | FAST CMOS QUAD 2-INPUT MULTIPLEXER IDT54/74FCT257T/AT/CT/DT FAST CMOS QUAD 2-INPUT MULTIPLEXER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
FAST CMOS QUAD 2-INPUT MULTIPLEXER
FEATURES:
• • • •
IDT54/74FCT257T/AT/CT/DT
DESCRIPTION:
• • • • •
Std., A, C, and D grades Low input and output leakage ≤1µA (max.) CMO | Integrated Device Tech | cmos |
| 4 | IDT74FCT257DTDQB | FAST CMOS QUAD 2-INPUT MULTIPLEXER IDT54/74FCT257T/AT/CT/DT FAST CMOS QUAD 2-INPUT MULTIPLEXER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
FAST CMOS QUAD 2-INPUT MULTIPLEXER
FEATURES:
• • • •
IDT54/74FCT257T/AT/CT/DT
DESCRIPTION:
• • • • •
Std., A, C, and D grades Low input and output leakage ≤1µA (max.) CMO | Integrated Device Tech | cmos |
| 5 | IDT74FCT257DTDSO | FAST CMOS QUAD 2-INPUT MULTIPLEXER IDT54/74FCT257T/AT/CT/DT FAST CMOS QUAD 2-INPUT MULTIPLEXER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
FAST CMOS QUAD 2-INPUT MULTIPLEXER
FEATURES:
• • • •
IDT54/74FCT257T/AT/CT/DT
DESCRIPTION:
• • • • •
Std., A, C, and D grades Low input and output leakage ≤1µA (max.) CMO | Integrated Device Tech | cmos |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica  Infineon Technologies diode | | |
| 2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap  Infineon Technologies AG diode | | |
| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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