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Datasheet IDT70V3589 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IDT70V3589 | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS IDT70V3599/89S DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
Features:
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True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns (166MHz)/4.2ns (133MHz) ( | Integrated Device Technology | data |
2 | IDT70V3589S | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS IDT70V3599/89S DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
Features:
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True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns (166MHz)/4.2ns (133MHz) ( | Integrated Device Technology | data |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap Infineon Technologies AG diode | | |
4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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Número de pieza | Descripción | Fabricantes | |
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