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Datasheet IDT70V3589 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IDT70V3589HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS IDT70V3599/89S DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (
Integrated Device Technology
Integrated Device Technology
data
2IDT70V3589SHIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS IDT70V3599/89S DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (
Integrated Device Technology
Integrated Device Technology
data


IDT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IDT02S60CSchottky Diode

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica
Infineon Technologies
Infineon Technologies
diode
2IDT03S60CSchottky Diode

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica
Infineon Technologies
Infineon Technologies
diode
3IDT04S60C2nd Generation thinQ SiC Schottky Diode

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap
Infineon Technologies AG
Infineon Technologies AG
diode
4IDT05S60C2nd Generation thinQ SiC Schottky Diode

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c
Infineon Technologies AG
Infineon Technologies AG
diode
5IDT06S60C2nd Generation thinQ SiC Schottky Diode

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca
Infineon Technologies AG
Infineon Technologies AG
diode
6IDT08S60C2nd Generation thinQ SiC Schottky Diode

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca
Infineon Technologies AG
Infineon Technologies AG
diode
7IDT100494HIGH-SPEED BiCMOS ECL STATIC RAM 64K

IDT
IDT
cmos



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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